053-4215 rev d 2-2010 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-220 package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ultrafast soft recovery rectifier diode 600v 30a apt30dq60k APT30DQ60KG* *g denotes rohs compliant, pb free terminal finish. 1 - cathode 2 - anode back of case - cathode 12 maximum ratings all ratings: t c = 25c unless otherwise speci ed. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.0 2.4 2.4 1.7 25 500 36 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 30a i f = 60a i f = 30a, t j = 125c v r = 600v v r = 600v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 117c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt30dq60k(g) 600 30 51 320 20 -55 to 175 300 1 2 (k) microsemi website - http://www.microsemi.com
053-4215 rev d 2-2010 min typ max - 23 - 30 - 55 - 3 - - 175 - 485 - 6 - - 75 - 855 - 22 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max .80 0.07 1.9 10 1.1 unit c/w oz g lb?in n?m apt30dq60k(g) dynamic characteristics z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 microsemi reserves the right to change, without notice, the speci cations and information contained herein.
apt30dq60k(g) typical performance curves 053-4215 rev d 2-2010 t j = 125 c v r = 400v 15a 30a 60a t rr q rr q rr t rr i rrm 200 180 160 140 120 100 80 60 40 20 0 25 20 15 10 5 0 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 60 50 40 30 20 10 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 180 160 140 120 100 80 60 40 20 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetempera ture v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 100 80 60 40 20 0 1200 1000 800 600 400 200 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of chan ge -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of cha nge 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 15a t j = 125 c v r = 400v 60a 15a 30a
apt30dq60k(g) 053-4215 rev d 2-2010 anode cathode cathode to-220 (k) package outline e3 100% sn 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v t rr / q rr waveform v r apt30gt60br microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. 0.404 [10.26] 0.393 [9.98] ?0.153 [3.89] ?0.149 [3.78] 0.114 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] typ 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.110 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36]
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